Method for making a semiconductor device using a flowable oxide film
US5883006A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Dec 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an opening in a first film is provided, wherein the opening has first and second opening portions and the first film is an insulating film. The first opening portion is formed in the first film and a second film is formed on an upper surface of the first film and to fill in the first opening portion. A masking film is formed on the second film. The first film and the second film are etched by a first etching process using the masking film as a mask to form the second opening portion. The first film and the second film are etched at substantially the same rate by the first etching process. The remaining portion of the second film in the first opening portion is etched by a second etching process. The second film is etched at a higher rate than the first film by the second etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.