Method for protecting nonsilicided surfaces from silicide formation using spacer oxide mask
US5883010A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Aug 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Problems forming silicided and nonsilicided structures on the same silicon substrate are overcome utilizing a spacer oxide masking technique. A protective spacer oxide layer is deposited over the entire silicon substrate surface, and a silicide exclusion photoresist mask is selectively developed to permit etching of the spacer oxide layer in unmasked regions where silicides are expected to be formed. Areas of silicon substrate revealed by etching of the spacer oxide layer are exposed to silicide-forming metals, and these silicide-forming metals react with the silicon substrate to produce silicides. Spacer oxide remaining in masked regions prevents formation of silicides in those regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.