Power semiconductor device
US5883403A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1996 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Sep 27, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
Abstract
In a semiconductor device, such as a diode and thyristor, having at least one pn junction between a pair of main surfaces, a first main electrode formed on the surface of one of the main surfaces and a second main electrode formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode to the second main electrode. Since the distribution of the carrier density in the conduction state can be flattened, the reverse recovery charge can be reduced substantially without causing the ON-state voltage to increase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.