Semiconductor device
US5883407A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1997 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Jun 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having an active region and first and second external regions located on opposite sides of the active region. The active region has a multi-finger pattern including gate electrodes, source electrodes, and drain electrodes. Each of the gate electrodes is interposed between one of the source electrodes and one of the drain electrodes. Mutually spaced gate pads are disposed on the first external region and each of the gate pads is connected to the gate electrodes. Mutually spaced drain pads are disposed on the second external region, and each of the drain pads is connected to the drain electrodes. Mutually spaced and grounded source pads are disposed on the first and second external regions, and each of the source pads is electrically connected to the source electrodes. Because the source pads are located on both the gate pad side and the drain pad side, the number of source pads having vias can be increased without changing the size of the source pads and the gate pads, reducing the number of source electrodes connected to one via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.