Tetsuo Kunii
16Patents
6h-index
26Co-inventors
62Inventor score
Filing activity: Jun 11, 1997 → Oct 29, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5883407A | Semiconductor device | Electricity | 17 | Expired |
| US7511575B2 | High-frequency power amplifier | Electricity | 13 | Active |
| US6307245A | Semiconductor device | Electricity | 12 | Expired |
| US6603190B2 | Semiconductor device | Electricity | 12 | Expired |
| US6713793B1 | Field effect transistor structure with bent gate | Electricity | 11 | Expired |
| US7557389B2 | Field-effect transistor | Electricity | 6 | Active |
| US6335265B1 | Method for manufacturing semiconductor device and semiconductor device | Electricity | 5 | Expired |
| US8796697B2 | Semiconductor device including transistor chips having oblique gate electrode fingers | Electricity | 4 | Active |
| US7528443B2 | Semiconductor device with recessed gate and shield electrode | Electricity | 2 | Active |
| US6911837B2 | Method and apparatus for evaluating and adjusting microwave integrated circuit | Electricity | 1 | Expired |
| US10355130B2 | Semiconductor device | Electricity | 1 | Active |
| US9117742B2 | High electron mobility transistor with shortened recovery time | Electricity | 0 | Active |
| US7042053B2 | Semiconductor device with polymer insulation of some electrodes | Electricity | 0 | Expired |
| US9543902B2 | Power amplifier | Electricity | 0 | Active |
| US8232609B2 | Semiconductor device including field effect transistor with reduced electric field concentration | Electricity | 0 | Active |
| US7304329B2 | Field effect transistor | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.