System and method for measuring the doping level and doping profile of a region in a semiconductor substrate
US5883518A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 24, 1996 |
| Grant date | Mar 16, 1999 |
| Priority date | — |
| Expiry date | Apr 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system for measuring the doping levels of a doped region in a semiconductor substrate, wherein an analyzer beam and a reference beam are generated, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overlapping. The analyzer beam is focused on a preselected doped region of the substrate and the reference beam is focused on an undoped region of the substrate, the doped region generating a phase shift of the analyzer beam relative to the reference beam corresponding to a level of doping of the doped region of the substrate. A detector detects the phase shift of the analyzer beam relative to the reference beam, and the doping level of the substrate in the preselected doped region is determined from the phase shift. The doping level measuring system may be used to control a semiconductor fabrication process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.