Boxer Cross, INC
14Patents
0Active
14Granted
33Portfolio score
Filing activity: Apr 24, 1996 → Mar 1, 2002
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6049220A | Apparatus and method for evaluating a wafer of semiconductor material | Electricity | 75 | Expired |
| US6054868A | Apparatus and method for measuring a property of a layer in a multilayered structure | Physics | 53 | Expired |
| US6323951A | Apparatus and method for determining the active dopant profile in a semiconductor wafer | Physics | 50 | Expired |
| US5966019A | System and method for measuring properties of a semiconductor substrate in a fabrication line | Electricity | 46 | Expired |
| US5877860A | System and method for measuring the microroughness of a surface of a substrate | Physics | 46 | Expired |
| US6154280A | System and method for measuring the microroughness of a surface of a substrate | Physics | 40 | Expired |
| US5883518A | System and method for measuring the doping level and doping profile of a region in a semiconductor substrate | Electricity | 34 | Expired |
| US6426644B1 | Apparatus and method for determining the active dopant profile in a semiconductor wafer | Physics | 25 | Expired |
| US6483594B2 | Apparatus and method for determining the active dopant profile in a semiconductor wafer | Physics | 25 | Expired |
| US6971791B2 | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough | Electricity | 23 | Expired |
| US6812047B1 | Evaluating a geometric or material property of a multilayered structure | Electricity | 21 | Expired |
| US6911349B2 | Evaluating sidewall coverage in a semiconductor wafer | Physics | 10 | Expired |
| US6885444B2 | Evaluating a multi-layered structure for voids | Physics | 8 | Expired |
| US6812717B2 | Use of a coefficient of a power curve to evaluate a semiconductor wafer | Physics | 6 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.