Method for selective material deposition on one side of raised or recessed features
US5885425A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3447
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method provide deposition on a surface by angled sputtering using a collimation grid having angled vanes which limit the distribution of trajectories of particles in at least one coordinate direction around a central axis oriented at an angle of less than 90.degree. to said surface; resulting in improved uniformity of deposition and/or selective favoring of deposition on surfaces at a high angle to the deposition surface (e.g. sidewalls). Substantially parallel orientation and uniform spacing of the sputtering target and deposition surface provides good uniformity of results over the deposition surface. The angled trajectories of sputtered particles provides improved deposition on sides of upstanding mandrel features and filling of recessed features of high aspect ratio, especially when the collimation grid is rotated about an axis generally perpendicular to the deposition surface. Angled, collimated deposition also allows for control of deposition at potentially sub-lithographic feature sizes by using portions of features as a mask with deposition being performed only on remaining exposed portions of features or deposition on selected sides of a mandrel feature. S…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.