Integrated circuit having a dummy structure and method of making
US5885856A · kind A · utility
100Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1996 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Aug 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pattern of dummy structures (20) is added to the layout pattern of an integrated circuit (10) to equilibrate the polishing rate across the surface of a semiconductor substrate (11). The location of each dummy structure (20) is predetermined so that it does not intersect a well boundary (17) or an active region (21,27), and does not fall under a conductive material such as a layer of polysilicon (22,28) or an interconnect structure (23,29).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.