Patent · US Expired

Integrated circuit having a dummy structure and method of making

US5885856A · kind A · utility

100Cited by
9References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 21, 1996
Grant dateMar 23, 1999
Priority date
Expiry dateAug 21, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76819
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A pattern of dummy structures (20) is added to the layout pattern of an integrated circuit (10) to equilibrate the polishing rate across the surface of a semiconductor substrate (11). The location of each dummy structure (20) is predetermined so that it does not intersect a well boundary (17) or an active region (21,27), and does not fall under a conductive material such as a layer of polysilicon (22,28) or an interconnect structure (23,29).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.