Silicon carbide transistor and method
US5885860A · kind A · utility
57Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Jun 16, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide MESFET (10) is formed to have a source (21) and a drain (22) that are self-aligned to a gate (16) of the MESFET (10). The gate (16) is formed to have a T-shaped structure with a gate-to-source spacer (18) and gate-to-drain spacer (19) along each side of a base of the gate (16). The gate (16) is used as a mask for implanting dopants to form the source (21) and drain (22). A laser annealing is performed after the implantation to activate the dopants. Because the laser annealing is a low temperature operation, the gate (16) is not detrimentally affected during the annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.