Semiconductor component with linear current to voltage characteristics

US5886384A · kind A · utility

Assignee

• Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

• Anders Soderbarg · Uppsala, SE
• Andrej Litwin · Stockholm, SE

Key dates

• Filing date: Jul 25, 1997
• Grant date: Mar 23, 1999
• Expiry date: Jul 25, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/611

Abstract

A semiconductor device has a linear current-to-voltage characteristic through the origin of coordinates and additionally a bi-directional structure. The typical device contains an oxide layer on top of a p.sup.- doped substrate. On top of this oxide layer a n-type drift region is created which forms a longitudinal n-drift region. The n-drift region comprises at each end a low doped p-type well which has a portion with strongly doped p.sup.+ semiconductor material which will constitute contacting to either a source or a drain electrode. Each p-type well additionally contains a n.sup.+ area and additionally on top of said p-type well a gate electrode, whereby the n.sup.+ doped area is positioned in the p-well between a gate and a drain electrode or a gate and a source electrode, respectively. Thus a bi-directional double DMOS structure is created having a common drift region.