Andrej Litwin
22Patents
7h-index
14Co-inventors
62Inventor score
Filing activity: Jan 24, 1994 → Jun 20, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6100770A | MIS transistor varactor device and oscillator using same | Electricity | 44 | Expired |
| US6818959B2 | MEMS devices with voltage driven flexible elements | Performing Operations; Transporting | 39 | Expired |
| US6686233B2 | Integration of high voltage self-aligned MOS components | Electricity | 28 | Expired |
| US6507047B2 | Power transistors for radio frequencies | Electricity | 20 | Expired |
| US5659190A | Semiconductor device in a thin active layer with high breakdown voltage | Electricity | 18 | Expired |
| US6319848A | Inhomogenous composite doped film for low temperature reflow | Electricity | 8 | Expired |
| US6291859A | Integrated circuits | Electricity | 8 | Expired |
| US5432377A | Dielectrically isolated semiconductor device and a method for its manufacture | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6365918B1 | Method and device for interconnected radio frequency power SiC field effect transistors | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7164567B2 | Device for ESD protection of an integrated circuit | Electricity | 4 | Expired |
| US5886384A | Semiconductor component with linear current to voltage characteristics | Electricity | 4 | Expired |
| US7098741B2 | Monolithically integrated power amplifier device | Electricity | 3 | Expired |
| US6514799B2 | Method for substrate noise distribution | Electricity | 3 | Expired |
| US6611680B2 | Radio architecture | Electricity | 3 | Expired |
| US6183857A | Substrate for high frequency integrated circuits | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7019382B2 | Arrangement for ESD protection of an integrated circuit | Electricity | 2 | Expired |
| US5741723A | Dielectrically isolated semiconductor device and a method for its manufacture | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6475926B2 | Substrate for high frequency integrated circuits | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7227730B2 | Device for ESD protection of an integrated circuit | Electricity | 1 | Expired |
| US7379727B2 | RF front-end receiver | Electricity | 0 | Active |
| US6043555A | Bipolar silicon-on-insulator transistor with increased breakdown voltage | Electricity | 0 | Expired |
| US6973290B2 | Radio architecture | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.