Variable conducting element and method of programming
US5886920A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1997 |
| Grant date | Mar 23, 1999 |
| Priority date | — |
| Expiry date | Dec 1, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable conducting element (10) and method for programming a constant current or constant resistance provided at output terminals (24 and 26) of a ferroelectric transistor (12). The ferroelectric transistor (12) has portions of a ferroelectric material (32A) programmed having up-polarization states separated by domain walls (34) from portions of a ferroelectric material (32B) programmed having down-polarization states. The portion of the ferroelectric material (32A) programmed in the up-polarization state forms current conduction channels between a source region (23) and a drain region (25) of the ferroelectric transistor (12). The ferroelectric transistor (12) is programmed through a capacitor (14) to adjust the charge supplied to a control terminal (22) of the ferroelectric transistor (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.