Ellen Lan
9Patents
7h-index
19Co-inventors
52Inventor score
Filing activity: Mar 13, 1997 → Apr 5, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6156611A | Method of fabricating vertical FET with sidewall gate electrode | Electricity | 170 | Expired |
| US6867078B1 | Method for forming a microwave field effect transistor with high operating voltage | Electricity | 100 | Expired |
| US6091621A | Non-volatile multistate memory cell using a ferroelectric gate fet | Physics | 23 | Expired |
| US5886920A | Variable conducting element and method of programming | Physics | 23 | Expired |
| US7229903B2 | Recessed semiconductor device | Electricity | 13 | Expired |
| US6262451A | Electrode structure for transistors, non-volatile memories and the like | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7253486B2 | Field plate transistor with reduced field plate resistance | Electricity | 7 | Expired |
| US6939781B2 | Method of manufacturing a semiconductor component that includes self-aligning a gate electrode to a field plate | Electricity | 5 | Expired |
| US7253455B2 | pHEMT with barrier optimized for low temperature operation | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.