Process for the repair of floating-gate non-volatile memories damaged by plasma treatment
US5888836A · kind A · utility
2Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Dec 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28176
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes. The process comprises an annealing treatment at relatively low temperature (430.degree. C.) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.