Semiconductor device and fabrication method thereof
US5888858A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Jan 16, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film is formed in this step. At this time, gettering of the nickel element into the thermal oxide film takes place. Then, the thermal oxide film is removed. Thereby, a crystal silicon film having low concentration of the metal element and a high crystalinity can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.