Diffusion resistor structure with silicided contact areas, and methods of fabrication thereof
US5888875A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Jul 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/43
Abstract
This invention provides a diffusion resistor structure including a resistor-shaped diffusion having electrically integrated at opposite ends a first silicided contact area and a second silicided contact area. Polysilicon and oxide layers, or only an oxide layer, reside above a body region of the diffusion. The method provides for formation of the diffusion resistor with silicided contacts by utilizing a diffusion barrier layer which prevents diffusion into an overlying polysilicon layer when a subsequent dopant out diffusion step is performed. Selective etching is then utilized to remove the undoped polysilicon layer, leaving a polysilicon cap over the body region of the diffusion. A second region of the diffusion comprises the first contact area and second contact area, which are silicided once the body region is protected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.