Deep trench filling method using silicon film deposition and silicon migration
US5888876A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1996 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Apr 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H.sub.2 O and O.sub.2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.