Yoshitaka Tsunashima
79Patents
23h-index
70Co-inventors
91Inventor score
Filing activity: May 2, 1984 → Apr 27, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6087719A | Chip for multi-chip semiconductor device and method of manufacturing the same | Electricity | 185 | Expired |
| US6376888B1 | Semiconductor device and method of manufacturing the same | Electricity | 83 | Expired |
| US6335251B1 | Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor | Electricity | 76 | Expired |
| US6333547A | Semiconductor device and method of manufacturing the same | Electricity | 68 | Expired |
| US5888876A | Deep trench filling method using silicon film deposition and silicon migration | Electricity | 58 | Expired |
| US6346438B1 | Method of manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 53 | Expired |
| US6570217B1 | Semiconductor device and method of manufacturing the same | Electricity | 46 | Expired |
| US6278164A | Semiconductor device with gate insulator formed of high dielectric film | Electricity | 46 | Expired |
| US6617226B1 | Semiconductor device and method for manufacturing the same | Electricity | 44 | Expired |
| US5069244A | Liquid source container device | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6784508B2 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof | Electricity | 38 | Expired |
| US7019364B1 | Semiconductor substrate having pillars within a closed empty space | Physics | 37 | Expired |
| US6100132A | Method of deforming a trench by a thermal treatment | Emerging Cross-Sectional Technologies | 36 | Expired |
| US6284583A | Semiconductor device and method of manufacturing the same | Electricity | 34 | Expired |
| US5970352A | Field effect transistor having elevated source and drain regions and methods for manufacturing the same | Electricity | 34 | Expired |
| US6232641A | Semiconductor apparatus having elevated source and drain structure and manufacturing method therefor | Electricity | 31 | Expired |
| US5582640A | Semiconductor device and its fabricating method | Electricity | 29 | Expired |
| US7372113B2 | Semiconductor device and method of manufacturing the same | Electricity | 29 | Expired |
| US4575920A | Method of manufacturing an insulated-gate field-effect transistor | Electricity | 28 | Expired |
| US6326658A | Semiconductor device including an interface layer containing chlorine | Electricity | 26 | Expired |
| US7235456B2 | Method of making empty space in silicon | Physics | 25 | Expired |
| US5605574A | Semiconductor wafer support apparatus and method | Chemistry; Metallurgy | 24 | Expired |
| US6093243A | Semiconductor device and its fabricating method | Electricity | 23 | Expired |
| US6383837B1 | Method of manufacturing a multi-chip semiconductor device effective to improve alignment | Electricity | 22 | Expired |
| US6184083A | Semiconductor device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 21 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.