Method of dividing a wafer and method of manufacturing a semiconductor device
US5888883A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1998 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Apr 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.