Method for fabricating three-dimensional quantum dot arrays and resulting products
US5888885A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 14, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the invention, a uniformly spaced three-dimensional array of quantum dots is fabricated by forming a uniform grid of intersecting dislocation lines, nucleating a regular two-dimensional array of quantum dots on the intersections, and replicating the array on successively grown layers. The substrate is partitioned into a grid of in-plane lattice parameters, thereby providing a regular array of preferential nucleation sites for the influx atoms of a different size during the epitaxial process. The regularity of the array results in an equal partition of the incoming atoms which, in turn, leads to uniformly sized islands nucleating on these preferred sites. The result is a uniformly sized, regularly distributed two-dimensional array of quantum dots which can be replicated in succeeding layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.