Integrated circuit insulator and method
US5888905A · kind A · utility
13Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Nov 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A intermetal level dielectrics with fluorinated (co)polymers of parylene (142) between metal lines (112-120), and vapor deposition method for the (co)polymerization followed by fluorination of the (co)polymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.