Thin film capacitor
US5889299A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Feb 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.