Semiconductor device with high breakdown voltage island region
US5889310A · kind A · utility
32Cited by
2References
3Claims
0Family size
Assignee
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Key dates
| Filing date | May 9, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
Abstract
A high breakdown voltage pch-MOSFET having a breakdown voltage of 150V or more and a control element controlling the same are formed in a common n.sup.- epitaxial layer. Only an n-type region of n.sup.- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.