Microwave power amplifier
US5889434A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Jul 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F1/3241
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A microwave power amplifier having n stages (n is an integer of at least two), which uses bipolar transistors as amplifying elements. Grounded electrodes, bias applying methods, and bias values of the bipolar transistors of the respective stages are set so that phase rotations of output powers of bipolar transistors of m stages (m is an integer of 1.ltoreq.m.ltoreq.n-1) among the n stages are canceled by phase rotation of at least one of the other bipolar transistors of the (n-m) stages. Therefore, the total phase rotation of the power amplifier can be neutralized, resulting in a microwave power amplifier having excellent distortion characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.