Topography simulation method
US5889678A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | May 12, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/23
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a topography simulation method, the topography of a resist pattern after curing treatment can be precisely estimated without producing a complex physical model or performing parameter measurement. Specifically, in the method of estimating the topography of a resist pattern, which is formed by selectively removing a part of a resist provided on a substrate and contracts due to curing treatment, the resist pattern is divided into a plurality of cells and the cells are contracted in accordance with a volume shrinkage amount per unit volume of the resist in the curing treatment. Then, the cells located closer to an interface between the substrate and the resist pattern are flattened to a higher degree in parallel to the substrate, and the deformed cells are brought together toward a shrinkage reference line passing through a center of a line pattern and toward the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.