Chemical mechanical polishing composition
US5891205A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 1997 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Aug 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A chemical mechanical polishing composition for polishing an oxide layer of a semiconductor device, the composition comprising an alkaline aqueous dispersion containing generally uniformly-shaped nanocrystalline particles of cerium oxide derived from a physical vapor synthesis process, generally uniformly-shaped particles of silicon dioxide, and wherein the cerium oxide particles are substantially the same or smaller in size and size distribution to the silicon dioxide particles. The ratio of the weight of the silicon dioxide in the composition to the weight of the cerium oxide in the composition is in the range from about 7.5:1 to about 1:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.