Formation of a bottle shaped trench
US5891807A · kind A · utility
37Cited by
5References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 25, 1997 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Sep 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a bottle shaped trench 20 in a semiconductor substrate 10 includes reactive ion etching a trench having a tapered top portion 25 in the semiconductor device and continuing to reactive ion etch while increasing the temperature of the semiconductor device to impart a reentrant profile 22 to the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.