Manufacturable dielectric formed using multiple oxidation and anneal steps
US5891809A · kind A · utility
57Cited by
10References
38Claims
0Family size
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Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Apr 6, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. First, a substrate is oxidized in a chlorinated dry oxidation followed by a low temperature pyrogenic steam oxidation. Next, a low temperature ammonia anneal is performed, followed by a high temperature anneal in an inert ambient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.