Lawrence N. Brigham
12Patents
9h-index
17Co-inventors
65Inventor score
Filing activity: Nov 19, 1990 → Jun 21, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6121100A | Method of fabricating a MOS transistor with a raised source/drain extension | Electricity | 86 | Expired |
| US5714413A | Method of making a transistor having a deposited dual-layer spacer structure | Emerging Cross-Sectional Technologies | 81 | Expired |
| US5891809A | Manufacturable dielectric formed using multiple oxidation and anneal steps | Electricity | 57 | Expired |
| US5633202A | High tensile nitride layer | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5091332A | Semiconductor field oxidation process | Electricity | 43 | Expired |
| US6274913A | Shielded channel transistor structure with embedded source/drain junctions | Electricity | 35 | Expired |
| US6046494A | High tensile nitride layer | Emerging Cross-Sectional Technologies | 33 | Expired |
| US6380010B2 | Shielded channel transistor structure with embedded source/drain junctions | Electricity | 17 | Expired |
| US6017819A | Method for forming a polysilicon/amorphous silicon composite gate electrode | Emerging Cross-Sectional Technologies | 13 | Expired |
| US6703672B1 | Polysilicon/amorphous silicon composite gate electrode | Emerging Cross-Sectional Technologies | 9 | Expired |
| US5911111A | Polysilicon polish for patterning improvement | Electricity | 8 | Expired |
| US6720631B2 | Transistor having a deposited dual-layer spacer structure | Emerging Cross-Sectional Technologies | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.