Method for forming single silicon crystals using nucleation sites
US5893948A · kind A · utility
13Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 5, 1996 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Apr 5, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.