Semiconductor device having a high breakdown voltage isolation region
US5894156A · kind A · utility
27Cited by
5References
14Claims
0Family size
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Key dates
| Filing date | Oct 29, 1996 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Oct 29, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
A resurf structure is provided which includes an n type diffusion region surrounded by a n- diffusion region, in which a part of the joined combination of the n type diffusion region and the n- diffusion region is separated by a narrow p- substrate region in between. An aluminum lead is provided between the separated n- diffusion regions, and a signal is level shifted. A high voltage semiconductor device which includes a small area high voltage isolation region is obtained without process cost increase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.