Low-leakage borderless contacts to doped regions
US5894169A · kind A · utility
5Cited by
19References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1996 |
| Grant date | Apr 13, 1999 |
| Priority date | — |
| Expiry date | Aug 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having low-leakage borderless contacts is formed by etching contact openings adjacent first and second electronic elements of opposite dopant type, conformally depositing a thin doped polysilicon layer, protecting the electronic element of similar dopant-type, removing the thin doped polysilicon layer adjacent the oppositely doped electronic element diffusing dopant from said polysilicon layer into a side wall of the electronic element of similar dopant-type, and then depositing tungsten within the contact openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.