Process for growing single crystal
US5895526A · kind A · utility
24Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 1996 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Aug 6, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/48
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for growing a single crystal comprises providing a single crystal substrate acting as a seed crystal above a source material in a container, heating the source material in an inert gas atmosphere in the container to form a sublimed source material, and discharging the sublimed source material from the container through a port above the single crystal substrate, to cause the sublimed source material to flow along and in parallel with a surface of the single crystal substrate, and grow a single crystal on the surface of the single crystal substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.