Semiconductor device having inversion inducing gate
US5895949A · kind A · utility
41Cited by
2References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 20, 1997 |
| Grant date | Apr 20, 1999 |
| Priority date | — |
| Expiry date | Jun 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is characterized by comprising a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a plurality of cell transistors each having a control gate formed on the semiconductor substrate through the first insulating film, a second insulating film formed on upper and side surfaces of the control gate, and a conductive film formed on at least the side surface of the control gate through the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.