Inventor · Rifu, JP

Tetsuo Endoh

111Patents
20h-index
112Co-inventors
93Inventor score

Filing activity: Mar 7, 1990 → Oct 25, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5774397A Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state Physics 622 Expired
US5602789A Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller Physics 195 Expired
US5386422A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 168 Expired
US5555204A Non-volatile semiconductor memory device Physics 141 Expired
US5469444A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 140 Expired
US5321699A Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels Physics 127 Expired
US6727544B2 Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer Electricity 109 Expired
US5946231A Non-volatile semiconductor memory device Physics 82 Expired
US5523980A Semiconductor memory device Physics 79 Expired
US6014330A Non-volatile semiconductor memory device Physics 75 Expired
US6870215B2 Semiconductor memory and its production process Physics 65 Expired
US6933556B2 Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer Electricity 58 Expired
US6188611A Non-volatile semiconductor memory device Physics 48 Expired
US5895949A Semiconductor device having inversion inducing gate Electricity 41 Expired
US5677556A Semiconductor device having inversion inducing gate Electricity 40 Expired
US4996669A Electrically erasable programmable read-only memory with NAND memory cell structure Physics 35 Expired
US5483484A Electrically erasable programmable read-only memory with an array of one-transistor memory cells Physics 26 Expired
US5088060A Electrically erasable programmable read-only memory with NAND memory cell structure Physics 24 Expired
US5355332A Electrically erasable programmable read-only memory with an array of one-transistor memory cells Physics 21 Expired
US5179427A Non-volatile semiconductor memory device with voltage stabilizing electrode Physics 20 Expired
US7135726B2 Semiconductor memory and its production process Electricity 20 Expired
US5323039A Non-volatile semiconductor memory and method of manufacturing the same Electricity 17 Expired
US5824583A Non-volatile semiconductor memory and method of manufacturing the same Electricity 17 Expired
US7141506B2 Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same Electricity 11 Expired
US5596523A Electrically erasable programmable read-only memory with an array of one-transistor memory cells Physics 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.