High aspect ratio low resistivity lines/vias by surface diffusion
US5897370A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1996 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Oct 28, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12896
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of filling high aspect ratio vias and lines on the upper surface of a substrate prevents voids from being formed therein. The method comprises the steps of filling the lines and vias by surface diffusion at room temperature and at a pressure of 1 Torr. Step coverage of the fill material and sputtering parameters are chosen to satisfy a predetermined relationship. The upper surface of the substrate comprises regions of exposed aluminum, aluminum-copper or copper alloys. After filling the vias and lines, the exposed aluminum, aluminum-copper or copper alloys are reacted with a gas containing germanium to form a germanium alloy over the upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.