Photon-enhanced neutral beam etcher and cleaner
US5897844A · kind A · utility
3Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H3/02
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
An apparatus for processing substrates, the apparatus including a plurality of molecular dissociation furnaces. Each dissociation furnace produces a directed beam of neutral dissociated reactive species. Each reactive beam is directed at a surface of the semiconductor substrate. A photon source is also directed at the surface of the semiconductor substrate. The intensity and wavelength of the photon source are selected to enhance the reaction rate over that of the reactive beam acting alone on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.