Substrate of the silicon on insulator type for the production of transistors and preparation process for such a substrate
US5897939A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for the preparation of a substrate of the silicon on insulator type for the production of transistors. The process comprises the following stages: PA1 a) shaping the surface of a silicon substrate (10) in order to define a first region (20) and a second region (22) forming a depression with respect to the first region (20), PA1 b) formation in the first (20) and second (22) regions of a buried silicon oxide layer (26), which is level with the surface of a transition flank between the regions, PA1 c) elimination of the silicon oxide layer (26) level with the flank, PA1 d) epitaxying a silicon layer (32) on the first and second regions (20, 22) and on the transition flank, PA1 e) levelling the epitaxial layer (32) stopping at the silicon oxide layer (26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.