Patent · US Expired

Dual EPI active pixel cell design and method of making the same

US5898196A · kind A · utility

42Cited by
10References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 10, 1997
Grant dateApr 27, 1999
Priority date
Expiry dateOct 10, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/18

Abstract

The present invention is a dual epi active pixel sensor cell having a p- region of dual thickness and a method of making the same. The dual epi active pixel sensor cell produces a sensor with improved noise and latch-up reduction and improved red absorption. The thin p- epi region is positioned in the logic region for improved latch-up immunity. The thick p- epi is positioned in the pixel region for improved red absorption.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.