Magnetic memory cell with increased GMR ratio
US5898612A · kind A · utility
33Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1997 |
| Grant date | Apr 27, 1999 |
| Priority date | — |
| Expiry date | May 22, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
First and second layers of magnetic material are stacked in parallel, overlying relationship and separated by a first layer of non-magnetic material sandwiched therebetween to form a magnetic memory cell. A layer of oxide (e.g. NiO) is positioned on either one or both major surfaces of the magnetic memory cell. The oxide has a thickness (e.g. less than approximately 150 .ANG.) which prevents the layer of oxide from pinning the first and second layers of magnetic material and adapts the layer of oxide to the first and second layers of magnetic material so as to increase the GMR ratio of the magnetic memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.