Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
US5899720A · kind A · utility
52Cited by
7References
8Claims
0Family size
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Key dates
| Filing date | Dec 22, 1995 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Dec 22, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A cobalt disilicide layer is formed on a silicon layer through an etching of natural oxide grown on the silicon layer, a deposition of a cobalt layer by using a chemical vapor deposition, a conversion of the cobalt layer on the silicon layer to a cobalt suicide layer mainly composed of CoSi, an etching of the remaining cobalt layer and a conversion of the cobalt silicide layer to a cobalt disilicide layer, and the etching of the natural oxide to the conversion to the cobalt silicide are carried out in a vacuum ambience without breakage of the vacuum so that the cobalt disilicide does not penetrate into the silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.