Semiconductor device having an insulated gate

US5900648A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Andrei Konstantinov · Linköping, SE
• Erik Janzen · Borensberg, SE

Key dates

• Filing date: Mar 28, 1997
• Grant date: May 4, 1999
• Expiry date: Mar 28, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693

Abstract

A semiconductor device comprises a semiconductor layer of SiC and an insulating layer thereon for insulating the SiC layer with respect to a metal plate constituting a gate and connectable to a voltage for creating a conducting surface channel at a SiC layer-insulating layer interface, wherein at least a portion of the insulating layer closest to the interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC; and wherein the material has AlN as the only component or as a major component of an alloy with insulating properties.