MOS technology power device with low output resistance and low capacitance, and related manufacturing process

US5900662A · kind A · utility

Assignees

• SGS-Thomson Microelectronics S.A. · IT
• Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno · IT

Inventors

• Ferruccio Frisina · Gravina di Catania, IT
• Giuseppe Ferla · Catania, IT
• Salvatore Rinaudo · Trecastagni, IT

Key dates

• Filing date: Nov 4, 1996
• Grant date: May 4, 1999
• Expiry date: Nov 4, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivity type having a first resistivity value. Under each body region a respective lightly doped region of the second conductivity type is provided having a second resistivity value higher than the first resistivity value.