Single chip color MOS image sensor with two line reading structure and improved color filter pattern
US5901257A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1996 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | May 3, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/182
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a single chip color MOS image sensor with a novel two-line reading structure which is compatible with MOS fabrication technology. The invention allows the simultaneous reading of line signals from two adjacent rows of pixels so that combinations of signals from pixels in adjacent rows may be obtained without the use of an external delay line device. The sensor includes a pixel array having superimposed thereon an improved color filter pattern and a two-line reading structure which may be doubled so as to provide four line signals. The reading structure includes sets of storage capacitors on which the pixel signals are stored, and a means for reading the signals from the capacitors in such a way that signals from pixels in adjacent rows may be combined. The approximate ratios of the colors in the improved color filter pattern are one-half green, one-fourth yellow, and one-fourth cyan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.