Fabrication method for a gate quality oxide-compound semiconductor structure
US5904553A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1997 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Aug 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a gate quality oxide-compound semiconductor structure includes forming an insulating Ga.sub.2 O.sub.3 layer on the surface of a compound semiconductor wafer structure by a supersonic gas jet containing gallium oxide molecules and oxygen. In a preferred embodiment, a III-V compound semiconductor wafer structure with an atomically ordered and chemically clean semiconductor surface is transferred from a semiconductor growth chamber into an insulator deposition chamber via an ultra high vacuum preparation chamber. Ga.sub.2 O.sub.3 deposition onto the surface of the wafer structure is initiated by a supersonic gas jet pulse and proceeds via optimization of pulse duration, speed of gas jet, mole fraction of gallium oxide molecules and oxygen atoms, and plasma energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.