MISFET semiconductor integrated circuit device
US5905291A · kind A · utility
20Cited by
15References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 1995 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Jul 18, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A semiconductor integrated circuit device comprises at least two MISFETs formed on a semiconductor substrate and connected in series in a diode connection. Each of the MISFETs has a source, a drain, a channel extending between the source and the drain, and a gate disposed over the channel through a gate insulating film. One of the MISFETs has a first threshold voltage, and the other of the MISFETs has a second threshold voltage lower than the first threshold voltage. A portion of the channel of the semiconductor substrate of each of the MISFETs has an impurity concentration equal to or less than 6.times.10.sup.14 atoms/cc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.