Method of fabricating silicon-on-insulator substrate
US5907783A · kind A · utility
10Cited by
15References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1996 |
| Grant date | May 25, 1999 |
| Priority date | — |
| Expiry date | Dec 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
A method of fabricating a SOI substrate is disclosed, which includes the steps of: forming trenches in the Si substrate; forming an oxidation preventing film over the Si substrate and at the side-walls of the trenches; forming grooves at the bottoms of trenches by etching the Si substrate using the oxidation preventing film as a mask; carrying out an oxidation using to form an oxide film and a Si device layer isolated by the oxide film; removing the oxidation preventing film; and carrying out a planarization to form the silicon-on-insulator substrate having a planar surface.
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