Method of forming a silicon nitride layer
US5907792A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1997 |
| Grant date | May 25, 1999 |
| Priority date | — |
| Expiry date | Aug 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/961
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon nitride layer or film on a semiconductor wafer structure includes forming a silicon nitride layer on the surface of a wafer structure using a molecular beam of high purity elemental Si and an atomic beam of high purity nitrogen. In a preferred embodiment, a III-V compound semiconductor wafer structure is heated in an ultra high vacuum system to a temperature below the decomposition temperature of said compound semiconductor wafer structure and a silicon nitride layer is formed using a molecular beam of Si provided by either thermal evaporation or electron beam evaporation, and an atomic nitrogen beam provided by either RF or microwave plasma discharge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.