Polymer compositions for high resolution resist applications
US5908732A · kind A · utility
3Cited by
2References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1996 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Sep 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Positive lithographic patterns are produced by imagewise exposing to actinic light, x-ray or e-beam copolymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkyl acrylate with alkylmethacrylate and/or alkylacrylate, and then developing the polymer in a developer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.